1 2 3 absolute maximum ratings ( t j = 25c unless otherwise specified ) symbol parameter condition ratings units v drm repetitive peak off-state voltage 600 v i t(rms) r.m.s on-state current t c = 94 c 6.0 a i tsm surge on-state current one cycle, 50hz/60hz, peak, non-repetitive 60/66 a i 2 t i 2 t 18 a 2 s p gm peak gate power dissipation 3.0 w p g(av) average gate power dissipation 0.3 w i gm peak gate current 2.0 a v gm peak gate voltage 10 v v iso isolation breakdown voltage(r.m.s.) a.c. 1 minute 1500 v t j operating junction temperature - 40 ~ 125 c t stg storage temperature - 40 ~ 150 c mass 2.0 g features repetitive peak off-state voltage : 600v r.m.s on-state current ( i t(rms) = 6 a ) high commutation dv/dt isolation voltage ( v iso = 1500v ac ) general description this device is fully isolated pa ckage suitable for ac switching application, phase control app lication such as fan speed and temperature modulation control, lighting control and static switching relay. to-220f 1/6 triac / standard gate copyright@ d&i semiconductor co., ltd., all rights reserved. DTF6A60 may 2005 . rev 0 2.t2 3.gate 1.t1 symbol ? ? ? ? i t(rms) = 6 a i tsm = 66 a bv drm = 600v ul no. e256958
electrical characteristics symbol items conditions ratings unit min. typ. max. i drm repetitive peak off-state current v d = v drm , single phase, half wave t j = 125 c 1.0 ma v tm peak on-state voltage i t = 8 a, inst. measurement 1.5 v i + gt1 gate trigger current v d = 6 v, r l =10 ? 20 ma i - gt1 ? 20 i - gt3 ? 20 v + gt1 gate trigger voltage v d = 6 v, r l =10 ? 1.5 v v - gt1 ? 1.5 v - gt3 ? 1.5 v gd non-trigger gate voltage t j = 125 c, v d = 1/2 v drm 0.2 v (dv/dt)c critical rate of rise off-state voltage at commutation t j = 125 c, [di/dt]c = -3.0 a/ms, v d =2/3 v drm 5.0 v/ k i h holding current 10 ma r th(j-c) thermal impedance junction to case 3.8 c/w 2/6 DTF6A60
012345678 90 100 110 120 130 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o allowable case temperature [ o c] rms on-state current [a] 012345678 0 1 2 3 4 5 6 7 8 9 10 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o power dissipation [w] rms on-state current [a] -50 0 50 100 150 0.1 1 10 v + gt1 v _ gt1 v gt (t o c) v _ gt3 v gt (25 o c) junction temperature [ o c] 0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 0 10 1 10 2 t j = 25 o c t j = 125 o c on-state current [a] on-state voltage [v] 10 0 10 1 10 2 0 10 20 30 40 50 60 70 80 60hz 50hz surge on-state current [a] time (cycles) 10 1 10 2 10 3 10 -1 10 0 10 1 v gd (0.2v) i gm (2a) 25 ? p g (av) (0.3w) p gm (3w) v gm (10v) gate voltage [v] gate current [ma] 3/6 fig 1. gate characteristics fig 2. on-state voltage fig 3. on state current vs. maximum power dissipation fig 4. on state current vs. allowable case temperature fig 5. surge on-sta te current rating ( non-repetitive ) fig 6. gate trigger voltage vs. junction temperature ? ? 2 t 360 t ? : conduction angle ? ? 2 t 360 t ? : conduction angle DTF6A60
-50 0 50 100 150 0.1 1 10 i _ gt3 i + gt1 i _ gt1 i gt (t o c) i gt (25 o c) junction temperature [ o c] 10 -2 10 -1 10 0 10 1 10 2 1 10 transient thermal impedance [ o c/w] time (sec) 4/6 fig 8. transient thermal impedance fig 7. gate trigger current vs. junction temperature fig 9. gate trigger characteristics test circuit ? a v 10 ? 6v r g ? ? ? a v 10 ? 6v r g ? ? ? a v 10 ? 6v r g ? ? test procedure test procedure ? test procedure ? DTF6A60
dim. mm inch min. typ. max. min. typ. max. a 10.4 10.6 0.409 0.417 b 6.18 6.44 0.243 0.254 c 9.55 9.81 0.376 0.386 d 13.47 13.73 0.530 0.540 e 6.05 6.15 0.238 0.242 f 1.26 1.36 0.050 0.054 g 3.17 3.43 0.125 0.135 h 1.87 2.13 0.074 0.084 i 2.57 2.83 0.101 0.111 j2.54 0.100 k5.08 0.200 l 2.51 2.62 0.099 0.103 m 1.25 1.55 0.049 0.061 n 0.45 0.63 0.018 0.025 o 0.6 1.0 0.024 0.039 3.7 0.146 1 3.2 0.126 2 1.5 0.059 to-220f package dimension 1. t1 2. t2 3. gate a b c i g l 1 m e f 1 h k n o 2 3 j d 5/6 2 DTF6A60
dim. mm inch min. typ. max. min. typ. max. a 10.4 10.6 0.409 0.417 b 6.18 6.44 0.243 0.254 c 9.55 9.81 0.376 0.386 d 8.4 8.66 0.331 0.341 e 6.05 6.15 0.238 0.242 f 1.26 1.36 0.050 0.054 g 3.17 3.43 0.125 0.135 h 1.87 2.13 0.074 0.084 i 2.57 2.83 0.101 0.111 j2.54 0.100 k5.08 0.200 l 2.51 2.62 0.099 0.103 m 1.25 1.55 0.049 0.061 n 0.45 0.63 0.018 0.025 o 0.6 1.0 0.024 0.039 p 5.0 0.197 3.7 0.146 1 3.2 0.126 2 1.5 0.059 to-220f package dimension, forming 1. t1 2. t2 3. gate a b c i g l 1 m e f 1 h k n o 2 3 j d 2 p 6/6 DTF6A60
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